Semiconductor memory device

ABSTRACT

A semiconductor memory device is provided which can achieve high performance, such as an improvement in reliability, an improvement in yield, and the like, without increasing the chip area. The semiconductor memory device is a non-volatile semiconductor memory device operable to program and erase data, and hold the data in the absence of a supplied voltage, comprising a memory cell including a first charge localized portion and a second charge localized portion each operable to store static charge corresponding to the data. The second charge localized portion stores static charge corresponding to static charge which should be stored in the first charge localized portion, thereby serving as a backup to the first charge localized portion.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor memory device which canhold data during the time when a voltage is not supplied, such as aflash EEPROM (Electronically Erasable and Programmable Read Only Memory)or the like. More particularly, the present invention relates to asemiconductor memory device including a memory cell capable of storing aplurality of data values per cell (multiple bits/cell), such as an MNOS(Metal Nitride Oxide Semiconductor) memory cell.

2. Description of the Background Art

Semiconductor memory devices in which elements are integrated on asemiconductor substrate and data is stored are roughly divided into twotype: a volatile semiconductor memory device capable of holding dataonly during the time when a voltage is supplied; and a semiconductormemory device capable of holding data even during the time when avoltage is not supplied. The two types of semiconductor memory devicesare further divided into a plurality of types, depending on the systemor the usage.

One of the latter semiconductor memory devices that is most widely usedat the present time is a flash EEPROM which allows data to beelectrically programmed or erased. A type of flash EEPROM has currentlybecome the mainstream, which has a floating memory cell in which afloating gate whose surface is insulated with oxide film or the like isformed on a channel of a MOS (Metal Oxide Semiconductor) transistor. Inthe floating memory cell, data is stored by injecting or extractingelectrons to/from the floating gate to change a gate voltage thresholdvalue (hereinafter referred to as Vt) at which a source-drain currentstarts flowing in the MOS transistor.

On the other hand, in recent years, the limelight is shifting again toan MNOS memory cell. Unlike the floating memory cell, the MNOS memorycell has an ONO film formed on the channel of the MOS transistor, and Vtis changed by injecting electrons or holes into a trap of an ONO filminterface. The MNOS memory cell is characterized in that trapped staticcharge (electrons or holes) cannot substantially move. Therefore, in theMNOS memory cell, even if there is an oxide film defect as in thefloating memory cell, not all static charge stored therein is extracted.Such a feature possessed by the MNOS memory cell is advantageous withrespect to data loss over time (retention problem) which has become moreserious in recent years as the thickness of the oxide film is reduced.

In the MNOS memory cell, since the injected static charge does not move,the static charge can be localized on the channel. Generally, theinjection of static charge occurs in the vicinity of the drain where hotelectrons are generated. Therefore, in the MNOS memory cell, the staticcharge is localized on the ON film interface in the vicinity of thedrain. The source and drain of the MNOS memory cell are determined,depending on a bias condition, and therefore, the bias condition betweenthe source and the drain can be reversed during the time when thesemiconductor memory device is used. Therefore, in the MNOS memory cell,two charge localized portions can be formed on both sizes of the channelof the memory cell. Therefore, in the MNOS memory cell, by assigning onepiece of data to each of the two charge localized portions, two piecesof data can be stored in one cell. Because of such a feature,expectations are growing for the MNOS memory cell.

FIG. 15A is a cross-sectional diagram illustrating a general MNOS memorycell. In FIG. 15A, on a semiconductor substrate Sub, a LOCOS 101 forelement isolation, an ONO film 102, and a gate 103, and a diffusionlayer 104 and a diffusion layer 105 below the LOCOS 101, are formed. Thegate 103 is generally formed of polysilicon, and when a memory array isconfigured, is used as a word line. The diffusion layer 104 and thediffusion layer 105 are each the drain or source of a memory cell, andwhen a memory array is configured, are used as buried bit lines. Chargelocalized portions 106 and 107 are portions where charge is localized.

FIG. 15B is a schematic diagram illustrating the MNOS memory cell ofFIG. 15A. The same reference characters designate the same parts inFIGS. 15A and 15B. Note that, for the sake of simplicity, the gate 103,the diffusion layers 104 and 105 (one is a drain and the other is asource), and the charge localized portions 106 and 107 are indicatedwith symbols illustrated in FIG. 15B throughout all figures of theaccompanying drawings.

FIG. 16 is a schematic diagram illustrating a memory array composed ofconventional memory cells and its vicinity. Note that, in FIG. 16,although only a portion of the array is illustrated due to limitationsof space, the actual array generally has more memory cells providedvertically and horizontally. As illustrated in FIG. 16, a plurality ofmemory cells M01 to M06 are arranged in an array extending horizontallyin the figure. The gate of each memory cell is connected to ahorizontally extending word line WL0 (common node). Specifically, thecontrol gates of the memory cells M01 to M06 are connected to the wordline WL0. The source or drain of each memory cell is connected to acorresponding one of vertically extending bit lines BL0 to BL6 (commonnodes). For example, the drain or source of the memory cell M01 isconnected to the bit line BL0 or BL1, respectively. The drain or sourceof the memory cell M02 is connected to the bit line BL1 or BL2,respectively.

Each bit line is selectively connected via a switch 108 to one of theinputs of a sense amplifier 109. The drain of a reference cell R01 isconnected via a reference bit line RBL to the other input of the senseamplifier 109. The reference cell R01 may be a CMOS transistor which isdesigned so that a current having substantially a middle magnitudebetween a memory cell current when held data is 1 and a memory cellcurrent when held data is 0 flows. The reference cell R01 has a sourceline RSL and a word line RWL. The gate of the reference cell R01 isconnected to the word line RWL. An electrode of the reference cell R01which is not connected to the sense amplifier 109 is a source, which isconnected to the source line RSL.

In the case of the conventional example of FIG. 16, when a readoperation is performed, a current of each of the memory cells M01 to M06is compared with a current of the reference cell R01, and data stored ineach of the memory cells M01 to M06 is determined, depending on themagnitude relationship of the currents. A memory cell, from which datais read out, is selected by switching the connection of the bit lines tothe sense amplifier 109. In this case, when the bit lines are selected,care should be taken when determining from which of the two chargelocalized portions 106 and 107 of each memory cell data is to be readout.

For example, when static charge stored in the right-hand chargelocalized portion 107 of the memory cell M02 is read out, the bit lineBL1 is connected to the sense amplifier 109, and the bit line BL2 isconnected to a ground level. When data is read out from the left-handcharge localized portion 106, the bit line BL2 is connected to the senseamplifier 109, and the bit line BL1 is connected to the ground level.The bit line which is connected to the sense amplifier 109 precharged toa Hi level immediately before a read operation. Specifically, byreversing the direction of a bias voltage applied to a bit lineconnected to a memory cell, the source and drain of the memory cell areswitched to change the charge localized portions from which data isread.

As described above, two-bit data can be stored in and read from onecell. In some cases, one-bit data is stored in one cell, which may beadvantageous in terms of characteristics, reliability, and cost of aproduct. In this case, a configuration has been proposed in which theopposite charge localized portion of the same cell is normally not used.For example, in the above-described example, only the charge localizedportion 107 is used while the use of the charge localized portion 106 isabandoned, so that only one-bit data is stored in one cell. When thismemory cell configuration is used, the memory capacity is reduced byhalf, but this configuration still has superiority over the floatingtype in terms of the retention problem or the like.

When the MNOS memory cell of FIG. 15A is used to hold one bit per cell,charge is injected into or extracted from only the charge localizedportion 107 so as to store data, while charge is not injected into orextracted from the charge localized portion 106, for example. Therefore,the charge localized portion 106 is invariably in a neutral state. Whena read operation is performed, a bit line which the switch 108 connectsto the sense amplifier 109 in FIG. 16 is a bit line via which data isread out. The bit line used to read out data varies, depending on whichof the charge localized portions is used to store data.

FIG. 17 is a schematic diagram illustrating a configuration of aconventional semiconductor memory device, such as a flash memory or thelike. The conventional semiconductor memory device comprises memorysectors MS0 to MS3 which are normally used to store data, and aredundant memory sector MS4 which replaces a defective memory sectorwhich occurs due to a problem during a production among the normallyused memory sectors. Also, the conventional semiconductor memory deviceincludes a row decoder 110 (X-DEC) which drives a word line common toall the memory sectors including the redundant memory sector MS4, andcolumn decoders 111 to 115 (Y-DECs) and I/O circuits 116 to 120 whichare independently provided in the respective memory sectors.

The memory sector is a unit including a group of memory cells. In thecase of a flash memory, the memory sector is typically used as a groupof memory cells which are simultaneously subjected to an eraseoperation. Alternatively, the memory sector may be a group of memorycells which have a source line, a bit line, or a word line in common.The row decoder 110 is a group of a decoder which selects one word linein accordance with a designated address and a driver which supplies apotential to the selected word line. Similarly, the column decoders 111to 115 each select one bit line in accordance with a designated address.Specifically, the column decoder is a group of the switches 108 of FIG.16. The I/O circuits 116 to 120 are each a circuit group of the senseamplifier 109 and the reference cell R01 of FIG. 16 and a driver and thelike.

Next, a conventional redundant relief technique will be described withreference to FIG. 17. When a defective portion is found in the normallyused memory sectors MS0 to MS3 during an inspection before shipment of aproduct, the inspected semiconductor memory device is a defectiveproduct if any restoration is not performed. Therefore, by replacing thefunction of the defective portion thus found with a previously preparedspare portion (redundant memory sector), the semiconductor memory devicecan be caused to be a non-defective product. This operation is calledredundant relief.

For example, assuming that a defect occurs in a memory cell of thememory sector MS1, when the address of the memory sector MS1 isdesignated, the memory sector MS1 is disabled by changing an accessdestination to the redundant memory sector MS4. With the above-describedconfiguration, even if a defective portion is present in the memorysector MS1, substantially no problem occurs in actual use, so that thesemiconductor memory device can be shipped as a non-defective product(see Japanese Patent Laid-Open Publication No. 05-40702).

The smaller the units in which the redundant relief is performed, thesmaller the area which is occupied by prepared redundant memories.Therefore, conventionally, the redundant relief may be performed inunits of one word line or one bit line in DRAMs and the like. However,in non-volatile semiconductor memory devices, a defective memory celloften interfere with operations of non-defective memory cells presenttherearound, and it may be insufficient to perform changing in only thedefective memory cell.

For example, in the case of flash memories, even after changing, when anerase operation is performed with respect to a non-defective memorycell, an erase operation is also performed with respect to a defectivememory cell at the same time. Therefore, an erase operation with respectto a defective memory cell is repeated along with reprogramming of data,so that the defective memory cell which is in an excessively erasedstate short-circuits bit lines. In addition, when changing is performedin only a defective memory cell, it is difficult to secure reliability,for example. Therefore, in most flash memories, changing for redundantrelief is performed in units of a memory sector (erase unit).

In conventional semiconductor memory devices, according to theabove-described method, when a defect occurs in a normally used memorycell (memory sector), the defective memory cell (memory sector) isreplaced with a redundant memory cell (redundant memory sector) toperform relief, thereby improving the yield.

The configuration of the memory sector, the row decoder, the columndecoder, and the like of FIG. 17 is provided only for illustrativepurposes, and various other configurations have been conventionallyproposed. Note that all conventional configurations have the followingfeature in common: a memory cell (memory sector) for redundant relief isprovided in addition to a memory cell (memory sector) which is normallyused.

However, in the conventional technique, an increase in chip areainevitably occurs, resulting in an increase in chip cost. A significantcost increase cancels a cost reduction due to a yield improvement whichis an effect of redundant relief. For example, if a cost increase due toa chip area increase exceeds a cost reduction due to a yieldimprovement, the redundant relief becomes meaningless. Even if a costincrease due to a chip area increase is smaller than a cost reductiondue to a yield improvement, the cost reduction effect due to the yieldimprovement is diminished, thereby making it difficult to reduce thecost of a product.

The increase of the chip area is also caused by other factors. Forexample, in semiconductor memory devices, if reprogramming of data isfrequently performed, stress during use degrades characteristics of abit storing data (endurance degradation), and, in the worst case, thedata is lost. Therefore, the following technique (BISR: Built-InSelf-Repairing) has been proposed: a counter which counts the number oftimes of reprogramming of data into a memory cell is provided in asemiconductor memory device to detect a predetermined number of times ofreprogramming, or alternatively, the endurance degradation of a memorycell is itself detected, so that data stored in a predetermined memorycell is automatically reprogrammed into another memory cell. However, ifa new memory cell is provided in a semiconductor memory device so as toachieve BISR, this leads to an increase in chip area and an increase inchip cost, as in the case of the above-described redundant relief.

SUMMARY OF THE INVENTION

Therefore, an object of the present invention is to provide asemiconductor memory device which can achieve high performance, such asan improvement in reliability, an improvement in yield, and the like,without increasing the chip area.

The object is achieved by the following semiconductor memory device. Thesemiconductor memory device is a non-volatile semiconductor memorydevice operable to program and erase data, and hold the data in theabsence of a supplied voltage, comprising a memory cell including afirst charge localized portion and a second charge localized portioneach operable to store static charge corresponding to the data. Thesecond charge localized portion stores static charge corresponding tostatic charge which should be stored in the first charge localizedportion, thereby serving as a backup to the first charge localizedportion.

With the above-described configuration, the second charge localizedportion is effectively used, thereby making it possible to achieve highperformance, such as an improvement in reliability, an improvement inyield, and the like, without increasing the chip area.

Preferably, the semiconductor memory device comprises a changing sectionfor changing the charge localized portions which should store the staticcharge corresponding to the data, wherein, when the first chargelocalized portion has difficulty in storing the static charge due to aproduction defect, the changing section changes the first chargelocalized portion to the second charge localized portion. With thisconfiguration, the second charge localized portion is effectively used,thereby making it possible to save a chip which would be otherwise adefective product by redundant relief. In this case, a memory cell whichis used in redundant relief is originally present, but is notadditionally provided for redundant relief, and therefore, an increasein chip area does not occur.

Preferably, the semiconductor memory device further comprises aplurality of the memory cells, and a flag circuit for outputting a flagsignal for changing the charge localized portions in all the pluralityof the memory cells. With this configuration, redundant relief can beperformed with respect to all the memory cells.

As an example, the flag circuit includes an electrically-reprogrammablenon-volatile memory and a latch circuit. With this configuration, aninspection process when redundant relief is performed can be simplified,thereby making it possible to reduce the cost.

As another example, the semiconductor memory device comprises aplurality of bit lines connected to the memory cells, and a plurality ofpower supply lines for supplying a power supply voltage to the memorycells. The changing section further includes a switch element operableto switch connection combinations between the bit lines and the powersupply lines, based on an output from the flag circuit. With thisconfiguration, the changing section can be simply configured.

As still another example, the semiconductor memory device comprises aplurality of power supply lines for supplying a power supply voltage tothe memory cells, and a plurality of power supply circuits which are tobe connected to the memory cells. The changing section further includesa switch element operable to switch connection combinations between thepower supply lines and the power supply circuits, based on an outputfrom the flag circuit. With this configuration, the changing section canbe simply configured.

Preferably, the semiconductor memory device further comprises aplurality of memory sectors including a plurality of the memory cells,and a plurality of flag circuits for outputting a flag signal forchanging the charge localized portions in each memory sector. With thisconfiguration, redundant relief can be performed for each memory sector,i.e., redundant relief can be performed in smaller units.

As an example, the semiconductor memory device comprises a plurality ofpower supply lines for supplying a power supply voltage to the memorycells, and a plurality of power supply circuits which are to beconnected to the memory cells. The changing section further includes aswitch element operable to switch connection combinations between thepower supply lines and the power supply circuits, based on an outputfrom the flag circuit. With this configuration, the changing section canbe simply configured.

Preferably, the semiconductor memory device comprises a plurality of thememory cells, each of the memory cells being specified with a rowaddress determined with a bit line and a column address determined witha word line, and a plurality of flag circuits for outputting a flagsignal for changing the charge localized portions for each row address.With this configuration, redundant relief can be performed for each rowaddress, i.e., redundant relief can be performed in smaller units.

As a example, the semiconductor memory device comprises a plurality ofpower supply lines for supplying a power supply voltage to the memorycells, and a plurality of power supply circuits which are to beconnected to the memory cells. The changing section further includes aswitch element operable to switch connection combinations between thepower supply lines and the power supply circuits, based on an outputfrom the flag circuit. With this configuration, the changing section canbe simply configured.

Preferably, the semiconductor memory device further comprises aplurality of the memory cells, each of the memory cells being specifiedwith a row address determined with a bit line and a column addressdetermined with a word line, and a plurality of flag circuits foroutputting a flag signal for changing the charge localized portions foreach column address. With this configuration, redundant relief can beperformed for each column address, i.e., redundant relief can beperformed in smaller units.

As an example, the semiconductor memory device comprises a plurality ofpower supply lines for supplying a power supply voltage to the memorycells, and a plurality of power supply circuits which are to beconnected to the memory cells. The changing section further includes aswitch element capable of changing connection combinations between thepower supply lines and the power supply circuits, based on an outputfrom the flag circuit. With this configuration, the changing section canbe simply configured.

Preferably, the semiconductor memory device further comprises aplurality of the memory cells, each of the memory cells being specifiedwith a row address determined with a bit line and a column addressdetermined with a word line, a plurality of first flag circuits foroutputting a flag signal for changing the charge localized portions foreach column address, a plurality of second flag circuits for outputtinga flag signal for changing the charge localized portions for each rowaddress, and a circuit for calculating a logical multiplication of anoutput of the first flag circuit and an output of the second flagcircuit. With this configuration, redundant relief can be performed foreach memory cell, i.e., redundant relief can be performed in smallerunits.

As an example, the semiconductor memory device comprises a plurality ofpower supply lines for supplying a power supply voltage to the memorycells, and a plurality of power supply circuits which are connected tothe memory cells. The changing section further includes a switch elementcapable of changing connection combinations between the power supplylines and the power supply circuits, based on an output from the circuitfor calculating the logical multiplication. With this configuration, thechanging section can be simply configured.

Preferably, the semiconductor memory device comprises a changing sectionfor changing the charge localized portions which should store staticcharge corresponding to the data, wherein, when characteristics of thefirst charge localized portion are degraded due to actual use, thechanging section changes the first charge localized portion to thesecond charge localized portion. With this configuration, thereliability can be improved and the defective product can be saved.

Preferably, the semiconductor memory device comprises a counter circuitfor counting the number of times of reprogramming, and when the numberof times of reprogramming counted exceeds a predetermined value,outputting a signal, and a flag circuit for outputting a flag signal forchanging the charge localized portions, based on the signal output fromthe counter circuit. With this configuration, the defective product canbe saved and the number of times of reprogramming guaranteed can bedoubled.

As an example, the counter circuit includes a plurality of memorysectors, including a predetermined number of memory cells, for countingdifferent digits, and when a carry occurs in a lower-digit memorysector, the counter circuit adds and programs one bit to an upper-digitmemory sector, and erase the lower-digit memory sector so as to countthe number of times of reprogramming. With this configuration, a countercircuit can be configured of less memory cells, thereby avoiding theincrease of the chip area.

As another example, the counter circuit includes a plurality of memorycells, and counts the number of times of reprogramming by changing athreshold voltage Vt of the memory cell. With this configuration, acounter circuit can be configured of less memory cells, thereby avoidingthe increase of the chip area.

Preferably, the semiconductor memory device further comprises a controlcircuit for outputting a signal when a predetermined phenomenon isdetected during a program or erase operation, and a flag circuit foroutputting a flag signal for changing the charge localized portions,based on the signal output from the control circuit. With thisconfiguration, the defective product can be saved and a variationbetween memory cells can be substantially avoided.

Preferably, when the first charge localized portion stores staticcharge, the second charge localized portion of the same memory cellstores static charge, and thereafter, the first charge localized portionis subjected to an erase operation before reading out data from thesecond charge localized portion. With this configuration, thesemiconductor memory device does not need to spend a waiting time forerasing data before reprogramming data, and can process a rush ofreprogram commands.

The object is also achieved by the following semiconductor memorydevice. The semiconductor memory device is a non-volatile semiconductormemory device operable to program and erase data, and holding the datain the absence of a supplied voltage, comprising a memory cell includinga first charge localized portion and a second charge localized portioneach operable to store static charge corresponding to the data. Thefirst charge localized portion is normally used to store static chargeto store programmable and erasable data, and when the first chargelocalized portion cannot normally store static charge, the second chargelocalized portion is used to store static charge storing data forspecifying and repairing the first charge localized portion. With thisconfiguration, the second charge localized portion stores data(so-called ECC) for detecting whether or not the first charge localizedportion can normally stores static charge and repairing the first chargelocalized portion. Therefore, a memory cell for storing an ECC does notneed to be separately prepared.

According to the present invention, a semiconductor memory device can beprovided which can achieve high performance, such as an improvement inreliability, an improvement in yield, and the like, without increasingthe chip area.

These and other objects, features, aspects and advantages of the presentinvention will become more apparent from the following detaileddescription of the present invention when taken in conjunction with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a schematic diagram illustrating a MNOS memory cell accordingto Embodiment 1 of the present invention;

FIG. 1B is a schematic diagram illustrating the MNOS memory cell ofEmbodiment 1 of the present invention;

FIG. 2 is a schematic diagram illustrating a whole semiconductor memorydevice of Embodiment 1 of the present invention;

FIG. 3 is a schematic diagram illustrating a memory array included in amemory sector and its vicinity of the semiconductor memory device ofEmbodiment 1 of the present invention;

FIG. 4 is a schematic diagram illustrating the memory array included inthe memory sector and its vicinity of the semiconductor memory device ofEmbodiment 1 of the present invention;

FIG. 5 is a circuit diagram illustrating a first configuration of a flagcircuit 1 of the semiconductor memory device of Embodiment 1 of thepresent invention;

FIG. 6 is a circuit diagram illustrating a second configuration of theflag circuit 1 of the semiconductor memory device of Embodiment 1 of thepresent invention;

FIG. 7 is a schematic diagram illustrating a memory array included in amemory sector of a semiconductor memory device according to Embodiment 2of the present invention and its vicinity;

FIG. 8 is a schematic diagram illustrating a whole semiconductor memorydevice according to Embodiment 3 of the present invention;

FIG. 9 is a schematic diagram illustrating a whole semiconductor memorydevice according to Embodiment 4 of the present invention;

FIG. 10 is a schematic diagram illustrating a whole semiconductor memorydevice according to Embodiment 5 of the present invention;

FIG. 11 is a schematic diagram illustrating a whole semiconductor memorydevice according to Embodiment 6 of the present invention;

FIG. 12 is a schematic diagram illustrating a whole semiconductor memorydevice according to Embodiment 7 of the present invention;

FIG. 13 is a conceptual diagram illustrating another example of thecounter circuit of Embodiment 7 of the present invention;

FIG. 14 is a schematic diagram illustrating a whole semiconductor memorydevice according to Embodiment 8 of the present invention;

FIG. 15A is a cross-sectional diagram illustrating a general MNOS memorycell;

FIG. 15B is a schematic diagram illustrating the MNOS memory cell ofFIG. 15A;

FIG. 16 is a schematic diagram illustrating a memory array composed ofconventional memory cells and its vicinity; and

FIG. 17 is a schematic diagram illustrating a configuration of aconventional semiconductor memory device, such as a flash memory or thelike.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1

FIGS. 1A and 1B are schematic diagrams illustrating an MNOS memory cellaccording to Embodiment 1 of the present invention. FIG. 1A illustratesa relationship between a source and a drain when data stored in a chargelocalized portion 107 is read out, and FIG. 1B illustrates arelationship between a source and a drain when data stored in a chargelocalized portion 106 is read out. Note that the MNOS memory cell ofFIGS. 1A and 1B has the same structure as that of the conventional MNOSmemory cell of FIGS. 15A and 15B.

The MNOS memory cell of Embodiment 1 can store two-bit data per cell.The MNOS memory cell of Embodiment 1 is a two-bits/cell memory cell, inwhich one of the charge localized portions is normally used to storestatic charge and the other charge localized portion is used as a backupto the static charge stored in the one charge localized portion.Hereinafter, an example will be described, where the charge localizedportion 107 is normally used to store static charge corresponding todata, and the charge localized portion 106 is used as a backup to thestatic charge stored in the charge localized portion 107.

In the MNOS memory cell of Embodiment 1, a data read operation isperformed by reading out the static charge stored in the chargelocalized portion 107. In this case, as illustrated in FIG. 1A, a biasvoltage is applied so that a buried diffusion layer 105 closer to thecharge localized portion 107 serves as a source, while a burieddiffusion layer 104 on the opposite side serves as a drain. By applyingthe bias voltage in this manner, it can be determined whether or not acurrent flows into the memory cell, depending on the presence or absenceof the static charge stored in the charge localized portion 107, therebymaking it possible to read out data stored in the charge localizedportion 107.

In the MNOS memory cell of Embodiment 1, a data program operation isperformed by storing static charge into the charge localized portion107. In this case, as illustrated in FIG. 1B, a bias voltage is appliedso that the buried diffusion layer 105 closer to the charge localizedportion 107 serves as a drain, while the buried diffusion layer 104 onthe opposite side serves as a source. By applying the bias voltage inthis manner, hot electrons which are generated around the chargelocalized portion 107 (i.e., in the vicinity of the drain) are injectedinto the charge localized portion 107, so that data is programmed intothe charge localized portion 107.

Here, it is assumed that a defect occurs in the charge localized portion107 due to a problem during production. Such a defect occurs in thefollowing situations: an oxide film around the charge localized portion107 becomes thicker than a prescribed thickness, so that a program timeor an erase time does not conform to its specification; a number ofcrystal defects are present in the oxide film around the chargelocalized portion 107, so that non-volatile data holding characteristicsare poor; and the like. When a phenomenon which causes a defect occurslocally, the defect may occur only in the charge localized portion 107,and substantially no problem may occur in the charge localized portion106 in the same memory cell. Particularly, if the cause of the defect inthe charge localized portion 107 is accidental, there may often besubstantially no problem with the operation of the charge localizedportion 106.

Therefore, when such a defect occurs, a semiconductor memory deviceaccording to Embodiment 1 reverses the bias condition applied to thememory cell to change the charge localized portions used to store data.Specifically, a bias condition for a read operation is changed so that,as illustrated in FIG. 1B, the buried diffusion layer 104 closer to thecharge localized portion 106 serves as a source, while the burieddiffusion layer 105 on the opposite side serves as a drain. Also, a biascondition for a program operation is changed so that, as illustrated inFIG. 1A, the buried diffusion layer 104 closer to the charge localizedportion 106 serves as a drain, while the buried diffusion layer 105 onthe opposite side serves as a source. The charge localized portion 107,which is no longer used to store data, is caused to be in the erasedstate.

FIG. 2 is a schematic diagram illustrating the whole semiconductormemory device of Embodiment 1 of the present invention. Thesemiconductor memory device of Embodiment 1 comprises memory sectors MS0to MS3 which are normally used to store data. The semiconductor memorydevice of Embodiment 1 further includes a row decoder 110 (X-DEC) fordriving a word line common to the memory sectors, column decoders 111 to114 (Y-DEC) which are independently provided in the respective memorysectors, I/O circuits 116 to 119 which are independently provided in therespective memory sectors, and a flag circuit 1.

The memory sector is a unit including a group of memory cells. In thecase of a flash memory, each memory sector is typically used as a groupof memory cells which are simultaneously subjected to an eraseoperation. Alternatively, the memory sector may be a group of memorycells which have a source line, a bit line, or a word line in common.The row decoder 110 is a group of a decoder which selects one word linein accordance with a designated address and a driver which supplies apotential to the selected word line. Similarly, the column decoders 111to 114 each select one bit line in accordance with a designated address.

The memory sectors MS0 to MS3 each include a plurality of memory cells.Each memory cell is the MNOS memory cell which is described in FIG. 1,and can store static charge corresponding to two-bit information percell. As described above, each memory cell has two charge localizedportions, i.e., a charge localized portion normally used to store staticcharge corresponding to data and a charge localized portion used as abackup to the stored static charge. The flag circuit 1 can hold apredetermined flag bit.

When a defect occurs in one of the charge localized portions which isnormally used to store static charge of a memory cell included in thememory sectors MS0 to MS3, the semiconductor memory device of Embodiment1 changes the charge localized portions, which should hold staticcharge, in all the memory cells based on an output of the flag circuit1. Specifically, the semiconductor memory device of Embodiment 1 changesthe bias voltages of the memory cells in all the memory sectors MS0 toMS3 in accordance with the output of the flag circuit 1, therebychanging the charge localized portions which are used to store data toperform relief with respect to a defective memory cell.

FIGS. 3 and 4 are schematic diagrams illustrating a memory arrayincluded in the memory sector and its vicinity of the semiconductormemory device of Embodiment 1 of the present invention. For example,regarding memory cells M01, M11, and M21, FIG. 3 is a schematic diagramillustrating the memory array when static charge is stored in a chargelocalized portion which is located on a right-hand side in the figure,and FIG. 4 is a schematic diagram illustrating the memory array whenstatic charge is stored in a charge localized portion which is locatedon a left-hand side in the figure. Note that, in FIGS. 3 and 4, due tolimitations of space, only a portion of the memory array is illustrated.FIGS. 3 and 4 illustrate the memory array in which nine memory cells arearranged and connected together in a matrix. The memory cells M01 to M03are arrange in an array extending horizontally in the figure. The gateof each memory cell is connected to a horizontally extending word lineWL0 (common node). Similarly, the control gates of memory cells M11 toM13 are connected to a word line WL1, and the control gates of memorycells M21 to M23 are connected to a word line WL2.

The source or drain of each memory cell is connected to a correspondingone of vertically extending bit lines BL0 to BL3 (common nodes). Forexample, the drains or sources of the memory cells M01 to M21 areconnected to the bit line BL0 or BL1, respectively. The drains orsources of the memory cells M02 to M22 are connected to the bit line BL1or BL2, respectively. The drains or sources of the memory cells M03 toM23 are connected to the bit line BL2 or BL3, respectively.

Each of the bit lines BL0 to BL3 is selectively connected via a switch108 to one of the inputs of a sense amplifier 109. The drain of areference cell R01 is connected via a reference bit line RBL to theother input of the sense amplifier 109. The reference cell R01 may be aCMOS transistor which is designed so that a current having substantiallya middle magnitude between a memory cell current when held data is 1 anda memory cell current when held data is 0 flows. The reference cell R01is connected to a source line RSL and a word line RWL. The gate of thereference cell R01 is connected to the word line RWL. An electrode ofthe reference cell R01 which is not connected to the sense amplifier 109is a source, which is connected to the source line RSL.

The bit lines BL0 to BL3 are connected via switch elements SWB0 to SWB3,respectively, to a power supply line PL0 connected to a power supplycircuit PS0, or a power supply line PL1 connected to a power supplycircuit PS1. The switch elements SWB0 to SWB3 are switches which can beturned simultaneously.

In the semiconductor memory device of Embodiment 1, when a readoperation is performed, a current of each memory cell is compared with acurrent of the reference cell R01, and based on the resultant magnituderelationship, data stored in the memory cell is determined. A memorycell from which data is read out is selected by switching the connectionof the bit lines to the sense amplifier 109.

In the above-described configuration, firstly, the switch elements SWB0to SWB3 are initially set so that the bit lines BL0 and BL2 areconnected to the power supply line PL0, and the bit lines BL1 and BL3are connected to the power supply line PL1, as illustrated in FIG. 3. Inthe above-described configuration, when a read operation is performed,the power supply circuit PS1 supplies a ground potential to the powersupply line PL1, and the power supply circuit PS0 supplies a Hi level ofpotential to the power supply line PL0. As a result, the groundpotential is applied to the bit lines BL1 and BL3, and the Hi potentialis supplied to the bit lines BL0 and BL2.

In the above-described bias condition, from the memory cells M01, M11,M21, M03, M13, and M23, data stored in the charge localized portion 107on the right-hand side of the figure of each memory cell is read out. Onthe other hand, from the memory cells M02, M12, and M22, data stored inthe charge localized portion 106 on the left-hand side of the figure ofeach memory cell is read out. Note that, in FIGS. 3 and 4, a chargelocalized portion from which data is read out is indicated by adding asymbol (a circle or a triangle).

For example, it is assumed that a defect occurs in the charge localizedportion 106 on the left-hand side of the memory cell M12. Here, asdescribed above, the defect occurs, for example, when an oxide filmaround the charge localized portion 106 of the memory cell M12 becomesthicker than a prescribed thickness, so that a program time or an erasetime does not conform to its specification, when a number of crystaldefects are present in the oxide film around the charge localizedportion 106 of the memory cell M12, so that non-volatile data holdingcharacteristics are poor, or the like. When a defect is detected in thememory cell M12, a flag signal of the flag circuit 1 is reversed andoutput.

When a defect occurring in the charge localized portion 106 on theleft-hand side of the memory cell M12 is detected and the flag signal isoutput from the flag circuit 1, the switch elements SWB0 to SWB3 arereversed so as to be in a connected state of FIG. 4, so that the biascondition is changed. The change of the bias condition reverses biasvoltages supplied to bit lines, so that the ground potential is appliedto the bit lines BL0 and BL2, and the Hi potential is supplied to thebit lines BL1 and BL3.

As a result, the charge localized portions from which data is read arechanged in all the memory cells. Therefore, from the memory cells M01,M11, M21, M03, M13, and M23, data stored in the charge localized portion106 on the left-hand side of the figure of each memory cell is read out,and from the memory cells M02, M12, and M22, data stored in the chargelocalized portion 107 on the right-hand side of the figure of eachmemory cell is read out. Regarding the memory cell M12, the chargelocalized portion 106 on the left-hand side of the figure, in which adefect occurs, can be caused not to be subjected to a read operation.

Note that, when the charge localized portions which should store staticcharge are changed, the switch elements SWB0 to SWB3 need to bereversed, and in addition, the connection of the switch 108 needs to bechanged. Also in program and erase operations, the charge localizedportions which should store static charge need to be changed, and thiscan be achieved by the same method as the method of changing the chargelocalized portions to be read, and will not be described.

As described above, the semiconductor memory device of Embodiment 1 canuse the charge localized portion 106 instead of the charge localizedportion 107 in which a defect occurs. Therefore, the memory cell can beused as a non-defective product, and therefore, a chip which wouldotherwise become a defective product can be saved as a non-defectiveproduct. In this case, a memory cell which is used in redundant reliefis originally present, but is not additionally provided for redundantrelief, and therefore, an increase in chip area does not occur.According to the semiconductor memory device of Embodiment 1, theredundant memory sector MS4 is not required as in the conventionalexample, and the yield can be improved without increasing the chip area.

FIG. 5 is a circuit diagram illustrating a first configuration of theflag circuit 1 of the semiconductor memory device of Embodiment 1 of thepresent invention. It is sufficient that an output of the flag circuit 1is a binary signal indicating whether or not the charge localizedportions, which should store static charge to hold data, are to bechanged. Here, as an example, it is assumed that data 0 (Low level)indicates that the charge localized portions are not to be changed, anddata 1 (Hi level) indicates that the charge localized portions are to bechanged.

For example, when redundant relief is performed during inspection aftera production process, the flag circuit 1 having the first configurationcan be used. In FIG. 5, the flag circuit 1 includes a physical fuse 2and a pull-up resistor 3. Specifically, as illustrated in FIG. 5, acommon node of the physical fuse 2 connected to the around and thepull-up resistor 3 connected to a power supply line is used as an outputof the flag circuit 1, and only when changing is performed, the fuse iscut. With this configuration, the output of the flag circuit 1 has theHi level only when changing is performed.

As a second configuration, a memory cell and a latch circuit can becombined to configure the flag circuit 1. Particularly, a portion of thememory cells which are normally used to store static chargecorresponding to data can be used as a memory cell included in the flagcircuit 1, thereby making it possible to provide the flag circuit 1 inthe semiconductor memory device without additionally providing a newcircuit configuration.

FIG. 6 is a circuit diagram illustrating a memory array including thesecond configuration of the flag circuit 1 of the semiconductor memorydevice of Embodiment 1 of the present invention. The memory array ofFIG. 6 is the same as the semiconductor memory device of Embodiment 1 ofFIGS. 3 and 4, except that memory cells MF1 to MF3 for the flag circuit1 and a word line WLF connected to the gates of these memory cells areprovided in a row direction, and a latch circuit 4 is connected to thesense amplifier 109.

In FIG. 6, when the semiconductor memory device is powered ON, a flagsignal is read out from the memory cells MF1 to MF3, and the result isstored into the latch circuit 4. An output of the latch circuit 4 isused as an output indicating changing the charge localized portions.Note that a charge localized portion for data storage of each of thememory cells MF1 to MF3 corresponding to the flag circuit 1 is subjectedto a read operation before reading the flag information, and therefore,cannot be changed. One memory cell is sufficient to provide the flagcircuit 1, but a plurality of memory cells need to be added underconstraints on the configuration of the memory array. Note that memorycells other than a memory cell for holding a flag signal may be used tostore flag signals for other applications, for example.

Thus, by using the flag circuit 1 having the second configuration, aflag signal for providing an output indicating changing of the chargelocalized portions is stored in a memory cell itself, thereby making itpossible to perform redundant relief without complicating the inspectionstep and increasing the cost, unlike the first configuration.

Embodiment 2

FIG. 7 is a schematic diagram illustrating a memory array included in amemory sector of a semiconductor memory device according to Embodiment 2of the present invention and its vicinity. The semiconductor memorydevice of Embodiment 2 has substantially the same configuration as thatof Embodiment 1 of FIGS. 2 to 4. Therefore, a difference therebetweenwill be hereinafter described, and the same parts will not be described.Also in FIG. 7, the same reference characters as those of Embodiment 1indicate the same parts.

The semiconductor memory device of Embodiment 2 is different from thatof Embodiment 1 of FIGS. 2 to 4 in connection portions between the bitlines BL0 to BL3 and the power supply lines PL0 and PL1. Thesemiconductor memory device of Embodiment 2 does not have the switchelements SWB0 to SWB3. Instead, the semiconductor memory device ofEmbodiment 2 has select word lines SWL0 and SWL1. The bit line BL0 isconnected via a select transistor ST00 to the select word line SWL0. Thebit line BL1 is connected via a select transistor ST11 to the selectword line SWL1. The bit line BL2 is connected via a select transistorST02 to the select word line SWL0. The bit line BL3 is connected via aselect transistor ST13 to the select word line SWL1.

Also in the semiconductor memory device of Embodiment 2, the powersupply line PL0 is connected via a switch element SW0 to the powersupply circuit PS0, and via a switch element SW2 to the power supplycircuit PS1. The power supply line PL1 is connected via a switch elementSW1 to the power supply circuit PS0, and via a switch element SW3 to thepower supply circuit PS1. Note that the switch 108, the sense amplifier109, the flag circuit 1, and the like are the same as those ofEmbodiment 1 and are not illustrated in FIG. 7.

In the semiconductor memory device of Embodiment 2, a potential suppliedto the power supply line PL0 and the power supply line PL1 can becontrolled, depending on states of the switch elements SW0 to SW3. As inEmbodiment 1, it is assumed that the power supply circuit PS1 supplies aground potential, and the power supply circuit PS0 supplies a Hi levelof potential.

For example, when the switch elements SW0 and SW3 are in the ON stateand the switch elements SW1 and SW2 are in the OFF state, the Hi-levelpotential is supplied to the power supply line PL0, so that the bitlines BL0 and BL2 connected via the select transistors ST00 and ST02 tothe power supply line PL0 go to the Hi-level potential. Also, theground-level potential is supplied to the power supply line PL1, so thatthe bit lines BL1 and BL3 connected via the select transistors ST11 andST13 to the power supply line PL1 go to the ground-level potential.

Conversely, when the switch elements SW0 and SW3 are in the OFF stateand the switch elements SW1 and SW2 are in the ON state, the potentialssupplied to the power supply lines PL0 and PL1 are reversed, andtherefore, the potentials supplied to the bit lines BL0 to BL3 arereversed. By changing bias voltage conditions in the above-describedmanner, the charge localized portions which store static chargecorresponding to data can be changed as in Embodiment 1.

In the above-described configuration, when a read operation isperformed, the switch elements SW0 and SW3 are initially set to be inthe ON state, and the switch elements SW1 and SW2 are initially set tobe in the OFF state. The power supply circuit PS1 supplies the groundpotential to the power supply line PL1, and the power supply circuit PS0supplies the Hi-level potential to the power supply line PL0. As aresult, the ground potential is supplied to the bit lines BL1 and BL3,and the Hi potential is supplied to the bit lines BL0 and BL2.

In the above-described bias condition, from the memory cells M01, M11,M21, M03, M13, and M23, data stored in the charge localized portion 107on the right-hand side of the figure of each memory cell is, read out.On the other hand, from the memory cells M02, M12, and M22, data storedin the charge localized portion 106 on the left-hand side of the figureof each memory cell is read out.

As in Embodiment 1, when a defect occurring in the charge localizedportion 106 on the left-hand side of the memory cell M12 is detected, sothat the flag signal is output from the flag circuit 1, the settings ofthe switch elements are reversed, i.e., the switch elements SW0 and SW3are in the OFF state and the switch elements SW1 and SW2 are in the ONstate, so that the bias condition is changed. By changing the biascondition, the bias voltages supplied to the bit lines are changed, sothat the ground potential is supplied to the bit lines BL0 and BL2, andthe Hi potential is supplied to the bit lines BL1 and BL3.

As a result, the charge localized portions from which data is read outare changed in all the memory cells, so that, from the memory cells M01,M11, M21, M03, M13, and M23, data stored in the charge localized portion106 on the left-hand side of the figure of each memory cell is read out,and from the memory cells M02, M12, and M22, data stored in the chargelocalized portion 107 on the right-hand side of the figure of eachmemory cell is read out. Regarding the memory cell M12, the chargelocalized portion 106 on the left-hand side of the figure, in which adefect occurs, can be caused not to be subjected to a read operation.

As described above, the semiconductor memory device of Embodiment 2 canuse the charge localized portion 106 instead of the charge localizedportion 107 in which a defect occurs. Therefore, the memory cell can beused as a non-defective product, and therefore, a chip which wouldotherwise become a defective product can be saved as a non-defectiveproduct. In this case, a memory cell which is used in redundant reliefis originally present, but is not additionally provided for redundantrelief, and therefore, an increase in chip area does not occur.

According to the semiconductor memory device of Embodiment 2, theredundant memory sector MS4 is not required as in the conventionalexample, the yield can be improved without increasing the chip area. Inaddition, in the semiconductor memory device of Embodiment 2, byproviding a switch which changes bias voltages in the vicinity of apower supply circuit, circuits, such as a switch element added so as tochange bias voltages, and the like, can be minimized.

Embodiment 3

FIG. 8 is a schematic diagram illustrating a whole semiconductor memorydevice according to Embodiment 3 of the present invention. Thesemiconductor memory device of Embodiment 3 has substantially the sameconfiguration as that of Embodiment 1. Therefore, a differencetherebetween will be hereinafter described, and the same parts will notbe described. Also in FIG. 8, the same reference characters as those ofEmbodiments 1 and 2 indicate the same parts.

The semiconductor memory device of Embodiment 3 comprises flag circuits5 to 8 corresponding to the memory sectors MS0 to MS3. The semiconductormemory device of Embodiment 3 is different from those of Embodiments 1and 2 in that, when a defect occurs in a charge localized portionsnormally used to store static charge of any memory cell included in thememory sectors MS0 to MS3, the charge localized portions are changed foreach memory sector based on an output of a flag circuit corresponding tothe memory sector including the memory cell. For example, when a memorycell in which a defect occurs is included in the memory sector MS1, thesemiconductor memory device of Embodiment 3 changes bias voltages of thememory cell included in the memory sector MS1 in accordance with anoutput of the flag circuit 6, to change the charge localized portionswhich are used to store data, thereby saving the defective memory cell.Note that, in the semiconductor memory device of Embodiment 3, anoperation of changing the bias voltages can be performed using themethod of Embodiment 2 described with reference to FIG. 7, or the like.

With the above-described configuration, the semiconductor memory deviceof Embodiment 3 can reverse the bias voltages for each memory sectorbased on an output from a flag circuit provided for each memory sector.Therefore, in the semiconductor memory device of Embodiment 3, by addinga flag circuit to each memory sector (i.e., a small change incircuitry), the bias voltages can be changed for each sector, so thatredundant relief can be effectively achieved in smaller units.

Embodiment 4

FIG. 9 is a schematic diagram illustrating a whole semiconductor memorydevice according to Embodiment 4 of the present invention. Thesemiconductor memory device of Embodiment 4 has substantially the sameconfiguration as that of Embodiment 1. Therefore, a differencetherebetween will be hereinafter described, and the same parts will notbe described. Also in FIG. 9, the same reference characters as those ofEmbodiments 1 and 2 indicate the same parts.

The semiconductor memory device of Embodiment 4 is characterized bycomprising a flag circuit for each row address of memory cells in thememory sectors MS0 to MS3. A flag circuit corresponding to each rowaddress is illustrated in a flag circuit group 9 of FIG. 9. The flagcircuit group 9 is connected between the row decoder 110 for drivingword lines common to the memory sectors and the memory cells.

The semiconductor memory device of Embodiment 4 is different from thoseof Embodiments 1 and 2 in that, when a defect occurs in a chargelocalized portion which is normally used to store static charge of anymemory cell, the charge localized portions are changed for each rowaddress based on an output of a flag circuit corresponding to the rowaddress of a word line of the memory cell in which the defect occurs.For example, when the memory cell in which the defect occurs is includedin the memory sector MS1 and is connected to the word line WL1, thesemiconductor memory device of Embodiment 4 changes the bias voltages ofmemory cells connected to the word line WL1 based on an output of a flagcircuit corresponding to the word line WL1 to change the chargelocalized portions which are used to store data, thereby saving thedefective memory cell. Note that, in the semiconductor memory device ofEmbodiment 4, an operation of changing the bias voltages can beperformed using the method of Embodiment 2 described with reference toFIG. 7, or the like.

As in Embodiments 1 to 3, the semiconductor memory device of Embodiment4 determines whether or not the bias condition reversal for changing thecharge localized portions which store data is to be performed, based onthe output of the flag circuit. However, in Embodiments 1 to 3, if thechanging has been once determined, the changing is not performed duringthe operation. In contrast, the semiconductor memory device ofEmbodiment 4 reverses the bias condition only when the flag circuitgroup 9 accesses a memory cell at a row address for which the chargelocalized portions should be changed. In other words, the semiconductormemory device of Embodiment 4 controls the changing of the bias voltagesin real time in accordance with the output of the flag circuit group 9.

With the above-described configuration, the semiconductor memory deviceof Embodiment 4 can reverse the bias voltages for each row address basedon the output of a flag circuit provided for each row address.Therefore, in the semiconductor memory device of Embodiment 4, by addinga flag circuit for each row address (i.e., a small change in circuitry),the bias voltages can be changed for each word line, so that redundantrelief can be effectively achieved in smaller units. In addition, thesemiconductor memory device of Embodiment 4 can change the bias voltagesin real time.

Embodiment 5

FIG. 10 is a schematic diagram illustrating a whole semiconductor memorydevice according to Embodiment 5 of the present invention. Thesemiconductor memory device of Embodiment 5 has substantially the sameconfiguration as that of Embodiment 1. Therefore, a differencetherebetween will be hereinafter described, and the same parts will notbe described. Also in FIG. 10, the same reference characters as those ofEmbodiments 1 and 2 indicate the same parts.

The semiconductor memory device of Embodiment 5 is characterized bycomprising a flag circuit for each column address of memory cells in thememory sectors MS0 to MS3. A flag circuit corresponding to each columnaddress is illustrated in a flag circuit group 10 of FIG. 10. The flagcircuit group 10 is connected between the column decoders 111 to 114 fordriving a bit line common to the memory sectors and the memory cells.

The semiconductor memory device of Embodiment 5 is different from thoseof Embodiments 1 and 2 in that, when a defect occurs in a chargelocalized portions which is normally used to store static charge of anymemory cell, the charge localized portions are changed for each columnaddress based on an output of a flag circuit corresponding to the columnaddress of a bit line of the memory cell in which the defect occurs. Forexample, when the memory cell in which the defect occurs is included inthe memory sector MS1 and is connected to the bit line BL1, thesemiconductor memory device of Embodiment 5 changes the bias voltages ofmemory cells connected to the bit line BL1 based on an output of a flagcircuit corresponding to the bit line BL1 to change the charge localizedportions which are used to store data, thereby saving the defectivememory cell. Note that, in the semiconductor memory device of Embodiment5, an operation of changing the bias voltages can be performed using themethod of Embodiment 2 described with reference to FIG. 7, or the like.

As in Embodiments 1 to 3, the semiconductor memory device of Embodiment5 determines whether or not the bias condition reversal for changing thecharge localized portions which store data is to be performed, based onthe output of a flag circuit. However, in Embodiments 1 to 3, if thechanging has been once determined, the changing is not performed duringthe operation. In contrast, the semiconductor memory device ofEmbodiment 5 reverses the bias condition only when the flag circuitgroup 10 accesses a memory cell at a column address for which the chargelocalized portions should be changed. In other words, the semiconductormemory device of Embodiment 5 controls the changing of the bias voltagesin real time in accordance with the output of the flag circuit group 10.

With the above-described configuration, the semiconductor memory deviceof Embodiment 5 can reverse the bias voltages for each column addressbased on the output of a flag circuit provided for each column address.Therefore, in the semiconductor memory device of Embodiment 5, by addinga flag circuit for each column address (i.e., a small change incircuitry), the bias voltages can be changed for each bit line, so thatredundant relief can be effectively achieved in smaller units. Inaddition, the semiconductor memory device of Embodiment 5 can change thebias voltages in real time.

Embodiment 6

FIG. 11 is a schematic diagram illustrating a whole semiconductor memorydevice according to Embodiment 6 of the present invention. Thesemiconductor memory device of Embodiment 6 has substantially the sameconfiguration as that of Embodiment 1. Therefore, a differencetherebetween will be hereinafter described, and the same parts will notbe described. Also in FIG. 11, the same reference characters as those ofEmbodiments 1 and 2 indicate the same parts.

The semiconductor memory device of Embodiment 6 is characterized bycomprising a flag circuit for each row address and each column addressof memory cells in the memory sectors MS0 to MS3. A flag circuitcorresponding to each row address is illustrated in a flag circuit group9 of FIG. 11. The flag circuit group 9 is connected between the rowdecoder 110 for driving word lines common to the memory sectors and thememory cells. A flag circuit corresponding to each column address isillustrated in a flag circuit group 10 of FIG. 11. The flag circuitgroup 10 is connected between the column decoders 111 to 114 for drivinga bit line common to the memory sectors and the memory cells.

The semiconductor memory device of Embodiment 6 is different from thoseof Embodiments 1 and 2 in that, when a defect occurs in a chargelocalized portion which is normally used to store static charge of anymemory cell, the charge localized portions are changed for the memorycell based on a logical multiplication of an output of a flag circuitcorresponding to the row address of a word line of the memory cell inwhich the defect occurs and an output of a flag circuit corresponding tothe column address of a bit line of the memory cell in which the defectoccurs. For example, when the memory cell in which the defect occurs isincluded in the memory sector MS1 and is connected to the word line WL1and the bit line BL1, the semiconductor memory device of Embodiment 6calculates a logical multiplication of an output of a flag circuitcorresponding to the word line WL1 and an output of a flag circuitcorresponding to the bit line BL1, and based on the result, changes thebias voltages of the memory cell to change the charge localized portionswhich are used to store data, thereby saving the defective memory cell.Note that, in the semiconductor memory device of Embodiment 6, anoperation of changing the bias voltages can be performed using themethod of Embodiment 2 described with reference to FIG. 7, or the like.

As in Embodiments 1 to 3, the semiconductor memory device of Embodiment6 determines whether or not the bias condition reversal for changing thecharge localized portions which store data is to be performed, based onthe output of a flag circuit. However, in Embodiments 1 to 3, if thechanging has been once determined, the changing is not performed duringthe operation. In contrast, the semiconductor memory device ofEmbodiment 6 reverses the bias condition only when a specific memorycell is accessed. In other words, the semiconductor memory device ofEmbodiment 6 controls the changing of the bias voltages in real time inaccordance with the logical multiplication of the output of the flagcircuit group 9 and the output of the flag circuit group 10.

With the above-described configuration, the semiconductor memory deviceof Embodiment 6 can reverse the bias voltages for each memory cell basedon the logical multiplication of the output of a flag circuit providedfor each row address and the output of a flag circuit provided for eachcolumn address. Therefore, in the semiconductor memory device ofEmbodiment 6, by adding a flag circuit for each row address and eachcolumn address (i.e., a small change in circuitry), the bias voltagescan be changed for each memory cell, so that redundant relief can beeffectively achieved in smaller units. In addition, the semiconductormemory device of Embodiment 6 can change the bias voltages in real time.

Embodiment 7

FIG. 12 is a schematic diagram illustrating a whole semiconductor memorydevice according to Embodiment 7 of the present invention. Thesemiconductor memory device of Embodiment 7 has substantially the sameconfiguration as that of Embodiment 1. Therefore, a differencetherebetween will be hereinafter described, and the same parts will notbe described. Also in FIG. 12, the same reference characters as those ofEmbodiments 1 and 2 indicate the same parts.

Generally, in semiconductor memory devices, if reprogramming of data isfrequently performed, stress during use degrades characteristics of abit for storing data (endurance degradation), and, in the worst case,programming or erasing of data is disabled. Therefore, in thesemiconductor memory device of Embodiment 7, in order to improve thereliability of the device, the charge localized portions which arenormally used to store static charge of a memory cell are changed beforeprogramming or erasing of data is disabled due to the endurancedegradation, thereby protecting the memory cell.

The semiconductor memory device of Embodiment 7 is characterized bycomprising flag circuits 5 to 8 provided for the memory sectors MS0 toMS3, respectively, and counter circuits 11 to 14 provided for the memorysectors MS0 to MS3, respectively, and in that each counter circuit andeach flag circuit are connected to each memory sector.

The semiconductor memory device of Embodiment 7 is shipped in a statethat any one of the charge localized portions is specified to benormally used to store static charge. The counter circuits 11 to 14count up every time the respective corresponding memory sectors arereprogrammed. In each counter circuit, when the number of times ofreprogramming exceeds a predetermined number of times, a programoperation is performed with respect to the flag circuit of a memorysector corresponding to the counter circuit, so that the output of theflag circuit is changed to an output indicating changing of the chargelocalized portions.

For example, when the number of times of reprogramming counted by thecounter circuit 11 exceeds the predetermined number of times, thecounter circuit 11 programs a signal into the flag circuit 5, so thatthe flag signal is ON. Thereafter, the semiconductor memory device ofEmbodiment 7 changes the bias voltages of the memory cell MS0 inaccordance with an output of the flag circuit 5 to change the chargelocalized portions which are used to store data, thereby preventingprogramming or erasing of data from being disabled due to the endurancedegradation. Note that, in the semiconductor memory device of Embodiment7, an operation of changing the bias voltages can be performed using themethod of Embodiment 2 described with reference to FIG. 7, or the like.

Note that, in the semiconductor memory device of Embodiment 7, a portionof the non-volatile memory cells can be used as the counter circuits. Byusing memory cells as counter circuits, it is possible to preventprogramming or erasing of data from being disabled due to the endurancedegradation without additionally providing a circuit. However, when thesemiconductor memory device is applied to a flash memory, sincereprogramming cannot be performed on a bit-by-bit basis in the flashmemory, a counter circuit needs to be additionally programmed everyreprogram operation.

Therefore, in the semiconductor memory device of Embodiment 7, eachcounter circuit may be composed of a plurality of small-size memorysectors including a predetermined number of memory cells. In thisconfiguration, the small-size memory sectors are caused to countdifferent digits. When a carry occurs in a memory sector at a lowerdigit, one bit is programmed into a memory sector at an upper digit, andthe lower-digit memory sector is erased. With this method, the number oftimes of reprogramming can be counted without additionally reprogramminga counter circuit.

FIG. 13 is a conceptual diagram illustrating another example of thecounter circuit of Embodiment 7 of the present invention. The countercircuit includes memory cells MC1 to MC3, and an A/D converter 15. Thememory cells MC1 to MC3 each change the threshold voltage Vt byperforming a program operation little by little every time the number oftimes of reprogramming is increased. Thereafter, the threshold voltageVt of the memory cell is converted into the number of times ofreprogramming by the A/D converter 15. In this case, the number of timesof reprogramming does not need to be correctly known and may be roughlyknown. Therefore, a variation in Vt by one reprogram operation may besmall. Thus, by changing the threshold voltage Vt of a memory cell, thenumber of times of reprogramming can be counted. The method may becombined with different digits or a carry process described above,thereby making it possible to count a larger number. Thus, by using thethreshold voltage Vt of a memory cell to count, the number of memorycells used for a counter circuit can be reduced, thereby making itpossible to save the chip area.

With the above-described configuration, the semiconductor memory deviceof Embodiment 7 can prevent programming or erasing of data from beingdisabled due to the endurance degradation, and since two chargelocalized portions are changed to use, the number of times ofreprogramming guaranteed can be doubled.

Embodiment 8

FIG. 14 is a schematic diagram illustrating a whole semiconductor memorydevice according to Embodiment 8 of the present invention. Thesemiconductor memory device of Embodiment 8 is a variation of Embodiment7. Therefore, a difference therebetween will be hereinafter described,and the same parts will not be described. Also in FIG. 14, the samereference characters as those of Embodiments 1 and 2 indicate the sameparts.

The semiconductor memory device of Embodiment 8 controls a memory cellby detecting the endurance degradation of the memory cell using aprogramming/erasing control circuit, but not by managing the number oftimes of reprogramming using a counter circuit.

The semiconductor memory device of Embodiment 8 is characterized bycomprising the flag circuits 5 to 8 provided for the memory sectors MS0to MS3, respectively, and a programming/erasing control circuitconnected to the flag circuits.

The semiconductor memory device of Embodiment 8 is shipped in a statethat each flag circuit does not change the charge localized portionswhich store data. When the programming/erasing control circuit 16detects the following predetermined phenomenon: a time at which aprogram or erase operation is completed exceeds a specification; a biasvoltage at the time of executing a program or erase operation deviatesfrom a predetermined value; or the like, during a program or eraseoperation with respect to the respective corresponding memory sectors,the programming/erasing control circuit 16 sets a flag to be ON in aflag circuit of a memory sector in which the problematic phenomenonoccurs.

For example, when the programming/erasing control circuit 16 detectsthat the program time of a specific memory sector included in the memorysector MS0 exceeds the predetermined time, the programming/erasingcontrol circuit 16 performs a program operation with respect to the flagcircuit 5 to set a flag signal to be ON. Thereafter, the semiconductormemory device of Embodiment 8 changes the bias voltages of the memorycell MS0 in accordance with an output of the flag circuit 5 to changethe charge localized portions which store data, thereby preventingprogramming or erasing of data from being disabled due to the endurancedegradation. Note that, in the semiconductor memory device of Embodiment8, an operation of changing the bias voltages can be performed using themethod of Embodiment 2 described with reference to FIG. 7, or the like.Note that the other memory perform the same operation.

With the above-described configuration, the semiconductor memory deviceof Embodiment 8 can prevent programming or erasing of data from beingdisabled due to the endurance degradation, and since two chargelocalized portions are changed to use, the number of times ofreprogramming guaranteed can be doubled. Particularly, the semiconductormemory device of Embodiment 8 detects the state of each memory cell,thereby effectively taking measures against a variation incharacteristics of a memory cell. Also, the semiconductor memory deviceof Embodiment 8 is effective to not only prevention of programming orerasing of data from being disabled due to the endurance degradation,but also a problem that static charge which is stored for a long periodin a charge localized portion is lost (retention failure).

Embodiment 9

Next, a semiconductor memory device according to Embodiment 9 of thepresent invention will be described. The semiconductor memory device ofEmbodiment 9 has substantially the same configuration as that of thesemiconductor memory device of Embodiment 1. In the semiconductor memorydevice of Embodiment 9, an error correct code (ECC) is stored in thecharge localized portion 106 which is not normally used to store data ofa predetermined memory cell.

The ECC refers to redundant data which is added separately from originaldata so as to correct an error in the original data when static chargeis read out, assuming that the static charge, which was stored in thecharge localized portion 107, is lost. The semiconductor memory deviceof Embodiment 9 generates and stores the ECC into the charge localizedportion 106 for fear that, when data is read out by accessing the chargelocalized portion 107 of a memory cell in any of the memory sectors, theread operation is disabled due to a defect in the charge localizedportion 107.

With the above-described configuration, the semiconductor memory deviceof Embodiment 9 can hold the ECC without additionally providing a part,such as a memory cell or the like, for holding the ECC. Therefore, thesemiconductor memory device of Embodiment 9 can improve a semiconductormemory device function without increasing the chip area.

Embodiment 10

Next, a semiconductor memory device according to Embodiment 10 of thepresent invention will be described. The semiconductor memory device ofEmbodiment 10 has substantially the same configuration as that of thesemiconductor memory device of Embodiment 1. In the semiconductor memorydevice of Embodiment 10, the charge localized portion 106 which is notnormally used to store data of a predetermined memory cell is used as atemporary area for temporarily programming data.

Typically, in a flash memory, all data is simultaneously erased in eachmemory sector, and therefore, if the whole memory sector is not erased,new data cannot be programmed into the memory sector. However, forexample, when a large amount of communication data is received, theerase time is a time lag, so that programming and erasing of a memorycannot be performed in time. Therefore, when data stored in the chargelocalized portion 107 is erased and programmed, the semiconductor memorydevice of Embodiment 10 stores the data into the charge localizedportion 106. Thereafter, the semiconductor memory device of Embodiment10 erases data in the charge localized portion 107 and removes chargefrom the charge localized portion 107, and thereafter, reads the dataprogrammed in the charge localized portion 106.

With the above-described configuration, the semiconductor memory deviceof Embodiment 10 does not need to spend a waiting time for erasing databefore reprogramming data, and can process a rush of reprogram commands.

The present invention can be applied to general apparatuses which use anon-volatile semiconductor memory device, such as a program memory for amobile apparatus (e.g., a mobile telephone terminal, etc.), a datamemory for a digital camera, or the like.

While the invention has been described in detail, the foregoingdescription is in all aspects illustrative and not restrictive. It isunderstood that numerous other modifications and variations can bedevised without departing from the scope of the invention.

1-15. (canceled)
 16. The semiconductor memory device according to claim22, comprising: a counter circuit for counting the number of times ofreprogramming, and when the number of times of reprogramming countedexceeds a predetermined value, outputting a signal; and a flag circuitfor outputting a flag signal for changing the charge localized portions,based on the signal output from the counter circuit.
 17. Thesemiconductor memory device according to claim 16, wherein the countercircuit includes a plurality of memory sectors, including apredetermined number of memory cells, for counting different digits, andwhen a carry occurs in a lower-digit memory sector, the counter circuitadds and programs one bit to an upper-digit memory sector and erase thelower-digit memory sector so as to count the number of times ofreprogramming.
 18. The semiconductor memory device according to claim16, wherein the counter circuit includes a plurality of memory cells,and counts the number of times of reprogramming by changing a thresholdvoltage Vt of the memory cell.
 19. The semiconductor memory deviceaccording to claim 22, comprising: a control circuit for outputting asignal when a predetermined phenomenon is detected during a program orerase operation; and a flag circuit for outputting a flag signal forchanging the charge localized portions, based on the signal output fromthe control circuit.
 20. The semiconductor memory device according toclaim 22, wherein, when the first charge localized portion stores staticcharge, the second charge localized portion of the same memory cellstores static charge, and thereafter, the first charge localized portionis subjected to an erase operation before reading out data from thesecond charge localized portion.
 21. A non-volatile semiconductor memorydevice operable to program and erase data, and hold the data in theabsence of a supplied voltage, comprising: a memory cell including afirst charge localized portion and a second charge localized portioneach capable of storing static charge corresponding to the data, whereinthe first charge localized portion is normally used to store staticcharge to store programmable and erasable data, and when the firstcharge localized portion cannot normally store static charge, the secondcharge localized portion is used to store static charge storing data forspecifying and repairing the first charge localized portion.
 22. Anon-volatile semiconductor memory device operable to program and erasedata, and hold the data in the absence of a supplied voltage,comprising: a memory cell including a first charge localized portion anda second charge localized portion each operable to store static chargecorresponding to the data, and a changing section for changing thecharge localized portions which should store static charge correspondingto the data; wherein the second charge localized portion stores staticcharge corresponding to static charge which should be stored in thefirst charge localized portion, thereby serving as a backup to the firstcharge localized portion, and wherein when characteristics of the firstcharge localized portion are degraded due to actual use, the changingsection changes the first charge localized portion to the second chargelocalized portion.